功率电子器件,宽禁带半导体,氮化镓,微纳制造,器件设计,物理/电路级测试表征,可靠性
- 1. Z. Han, S. Yang*, M. Wang, C. Chu and S. Long, "Achieving 205 cm2V-1s-1 Inve.
- 2. X. Xie, S. Yu, X. Tang, R. Chen, G. Xu, S. Long, S. Yang*, "kV-Class Vertical.
- 3. J. Du, C. Sun, Q. Tang, B. Jang, Z. Dong, X. Wu, S. Yang*, "An Efficient Swit.
- 4. (invited) S. Yang*, S. Han, K. Sheng, and K. J. Chen,"Dynamic on-resistance i.
- 5. S.Han, S.Yang*, and K. Sheng,“Conductivity modulation in vertical GaN PiN di.
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