功率电子器件，宽禁带半导体，氮化镓，微纳制造，器件设计，物理/电路级测试表征，可靠性
- 1. (invited) S. Yang*, S. Han, K. Sheng, and K. J. Chen,"Dynamic on-resistance i.
- 2. S.Han, S.Yang*, and K. Sheng,“Conductivity modulation in vertical GaN PiN di.
- 3. S. Li, K. Sheng, and S. Yang*, "Temperature-Dependent Dynamic Ron of GaN E-HE.
- 4. S. Han, S. Yang*, R. Li, X. Wu, and K. Sheng, “Current-collapse-free and fas.
- 5. S. Han, S. Yang*, and K. Sheng, “High-voltage and high-ION/IOFF vertical GaN.
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