2. Z. Han, S. Yang*, M. Wang, C. Chu and S. Long, "Achieving 205 cm2V-1s-1 Inversion Channel Mobility in 1.4 kV Vertical GaN-on-GaN MISFET with Nitride Gate Dielectric," 2024 IEEE International Electron Devices Meeting (IEDM), p. 40.2.1, Dec. 2024 (Featured in Compound Semiconductor)
点击次数：
是否译文：否
上一条： 1. C. Chu, J. Du, X. Yu, L. Jiang, Z. Wang, X. Xie, K. Tan, C. Zhao, Xi. Tang*, S. Long and S. Yang*, "Demonstration of Complementary Power Circuit With Normally-Off Diamond P-FET and GaN N-FET," 2025 IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, 2025, pp. 26.8.1.
下一条： 3. X. Xie, S. Yu, X. Tang, R. Chen, G. Xu, S. Long, S. Yang*, "kV-Class Vertical GaN PiN Diode Under Proton Irradiation: Impact on Conductivity Modulation," IEEE Electron Device Lett., vol. 46, no. 3, pp. 353-356, Mar 2025.