中国科学技术大学杨树--中文主页-- 1. C. Chu, J. Du, X. Yu, L. Jiang, Z. Wang, X. Xie, K. Tan, C. Zhao, Xi. Tang*, S. Long and S. Yang*, "Demonstration of Complementary Power Circuit With Normally-Off Diamond P-FET and GaN N-FET," 2025 IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, 2025, pp. 26.8.1.

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1. C. Chu, J. Du, X. Yu, L. Jiang, Z. Wang, X. Xie, K. Tan, C. Zhao, Xi. Tang*, S. Long and S. Yang*, "Demonstration of Complementary Power Circuit With Normally-Off Diamond P-FET and GaN N-FET," 2025 IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, 2025, pp. 26.8.1.

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下一条： 2. Z. Han, S. Yang*, M. Wang, C. Chu and S. Long, "Achieving 205 cm2V-1s-1 Inversion Channel Mobility in 1.4 kV Vertical GaN-on-GaN MISFET with Nitride Gate Dielectric," 2024 IEEE International Electron Devices Meeting (IEDM), p. 40.2.1, Dec. 2024 (Featured in Compound Semiconductor)

杨树 (教授)