- S.Yang and S.Han, "GaN Metal-Insulator-Semiconductor Field-Effect Transistors,"in Modern Power Electronic Devices: Physics, applications, and reliability, The Institution of Engineering and Technology(IET), ISBN: 978-1-78561-917-5. Chapter 9, 2020.[专著].Institution of Engineering and Technology,
- K. J. Chen and S. Yang, "Recent Progress in GaN-on-Si HEMT," in Handbook of GaN Semiconductor Materials and Devices, CRC Press, Taylor & Francis, ISBN: 978-1-4987-4713-4. Chapter 11, 2017.[专著].Taylor & Francis,
| |