中国科学技术大学杨树--中文主页-- S.Yang and S.Han, "GaN Metal-Insulator-Semiconductor Field-Effect Transistors,"in Modern Power Electronic Devices: Physics, applications, and reliability, The Institution of Engineering and Technology(IET), ISBN: 978-1-78561-917-5. Chapter 9, 2020

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S.Yang and S.Han, "GaN Metal-Insulator-Semiconductor Field-Effect Transistors,"in Modern Power Electronic Devices: Physics, applications, and reliability, The Institution of Engineering and Technology(IET), ISBN: 978-1-78561-917-5. Chapter 9, 2020

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出版单位：Institution of Engineering and Technology

简介：Edited by Francesco Iannuzzo, Institution of Engineering and Technology, 2020, ISBN: 978-1-78561-917-5 (hardcover); 978-1-78561-918-2 (electronic).

著作类别：专著

出版社级别：国外（境外）出版社

学科门类：工学

ISBN号：978-1-78561-917-5

是否译成外文：是

下一条： K. J. Chen and S. Yang, "Recent Progress in GaN-on-Si HEMT," in Handbook of GaN Semiconductor Materials and Devices, CRC Press, Taylor & Francis, ISBN: 978-1-4987-4713-4. Chapter 11, 2017

杨树 (教授)