杨树  (教授)

博士生导师 硕士生导师

办公地点:安徽省合肥市蜀山区黄山路242号,中国科学技术大学

学位:博士

学科:电子科学与技术

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K. J. Chen and S. Yang, "Recent Progress in GaN-on-Si HEMT," in Handbook of GaN Semiconductor Materials and Devices, CRC Press, Taylor & Francis, ISBN: 978-1-4987-4713-4. Chapter 11, 2017

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出版单位:Taylor & Francis

简介:This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics.

著作类别:专著

出版社级别:国外(境外)出版社

学科门类:工学

ISBN号:978-1-4987-4713-4

是否译成外文:

上一条: S.Yang and S.Han, "GaN Metal-Insulator-Semiconductor Field-Effect Transistors,"in Modern Power Electronic Devices: Physics, applications, and reliability, The Institution of Engineering and Technology(IET), ISBN: 978-1-78561-917-5. Chapter 9, 2020