6. X. Xie, M. Wang, Z. Wang, Z. Wang, C. Chu, G. Xu, S. Long, S. Yang*, "Enhanced Single-Event Hardness in GaN-on-Si HEMT With Gate-Junction Termination Extension," 37th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Kumamoto, Japan, Jun 1-5, 2025.
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上一条： 5. J. Du, H. Lin, D. Hou, S. Long, S. Yang*, "Ultrafast junction temperature mapping during surge current transient and thermal management in vertical GaN PiN diode," 37th IEEE Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2025 (功率半导体领域顶级会议)
下一条： 7. Z. Han, H. Zhang, S. Long, S. Yang*, "Low On-Resistance Vertical GaN-on-GaN Trench MIS-FET with Small Temperature Dependence," 37th IEEE Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2025