3. Z. Han, H. Zhang, S. Long, S. Yang*, "Low On-Resistance Vertical GaN-on-GaN Trench MIS-FET with Small Temperature Dependence," 37th IEEE Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2025
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上一条： 2. J. Du, C. Sun, Q. Tang, B. Jang, Z. Dong, X. Wu, S. Yang*, "An Efficient Switching Transient Analytical Model for P-GaN Gate HEMTs With Dynamic CG(VDS, VGS)," IEEE Trans. Power Electron., vol. 40, no. 1, pp. 2139-2148, Jan. 2025
下一条： 4. S. Li, K. Sheng, and S. Yang*, "Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain," IEEE Trans. Electron Devices, vol. 70, no. 7, pp. 3754-3761, July 2023