4. J. Du, H. Lin, D. Hou, S. Long, S. Yang*, "Ultrafast junction temperature mapping during surge current transient and thermal management in vertical GaN PiN diode," 37th IEEE Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2025 (功率半导体领域顶级会议)
点击次数：
是否译文：否
上一条： 3. J. Du, C. Sun, Q. Tang, B. Jang, Z. Dong, X. Wu, S. Yang*, "An Efficient Switching Transient Analytical Model for P-GaN Gate HEMTs With Dynamic CG(VDS, VGS)," IEEE Trans. Power Electron., vol. 40, no. 1, pp. 2139-2148, Jan. 2025
下一条： 5. X. Xie, M. Wang, Z. Wang, Z. Wang, C. Chu, G. Xu, S. Long, S. Yang*, "Enhanced Single-Event Hardness in GaN-on-Si HEMT With Gate-Junction Termination Extension," 37th IEEE Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2025