8. C. Chu, X. Xie, J. Wang, Z. Wang, M. Wang, H. Zhang, X. Tang*, S. Long and S. Yang*, "γ-Ray Irradiation-Induced Dynamic Ron Degradation in P-GaN Gate HEMT: Role of Surface Trapping," 38th IEEE Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2026
点击次数:
是否译文:否
上一条: 7. X. Xie, M. Wang, Z. Wang, Z. Wang, Y. Zhang, Q. Tang, C. Chu, G. Xu, S. Long, B. Shen and S. Yang*, "450 V/18 mΩ Radiation Hardened P-GaN Gate HEMT With Single-Event Hardness at 82 MeV·cm2/mg," 38th IEEE Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2026. (功率半导体领域顶级会议)
下一条: 9. J. Du, H. Lin, D. Hou, S. Long, S. Yang*, "Ultrafast junction temperature mapping during surge current transient and thermal management in vertical GaN PiN diode," 37th IEEE Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2025
