7. X. Xie, M. Wang, Z. Wang, Z. Wang, Y. Zhang, Q. Tang, C. Chu, G. Xu, S. Long, B. Shen and S. Yang*, "450 V/18 mΩ Radiation Hardened P-GaN Gate HEMT With Single-Event Hardness at 82 MeV·cm2/mg," 38th IEEE Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2026. (功率半导体领域顶级会议)
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上一条： 6. X. Bian, S. Yu, X. Liu, X. Tang*, S. Long and S. Yang*, "AlGaN/GaN Double-Channel Ultraviolet Photodetector With Polarization-Enhanced Photoresponsivity," IEEE Electron Device Lett., vol. 46, no. 7, pp. 1135-1138, July 2025.
下一条： 8. C. Chu, X. Xie, J. Wang, Z. Wang, M. Wang, H. Zhang, X. Tang*, S. Long and S. Yang*, "γ-Ray Irradiation-Induced Dynamic Ron Degradation in P-GaN Gate HEMT: Role of Surface Trapping," 38th IEEE Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2026