5. S. Han, S. Yang*, and K. Sheng, “High-voltage and high-ION/IOFF vertical GaN-on-GaN Schottky barrier diode with nitridation-based termination,” IEEE Electron Device Lett., vol. 39, no. 4, pp. 572–575, Apr. 2018. (Featured in Compound Semiconductor and Semiconductor Today)
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上一条： 4. S. Han, S. Yang*, R. Li, X. Wu, and K. Sheng, “Current-collapse-free and fast reverse recovery performance in vertical GaN-on-GaN Schottky barrier diode,” IEEE Trans. Power Electron., vol. 36, no. 6, pp. 5012-5018, Jun. 2019. (Featured in Compound Semiconductor and Semiconductor Today)
下一条： 6. Y. Liu, S. Yang*, S. Han, and K. Sheng, “Investigation of surge current capability of GaN E-HEMTs in the third quadrant: the impact of p-GaN contact,” IEEE J. Emerg. Sel. Topics Power Electron., vol. 7, no. 3, pp. 1465-1474, Sep. 2019