31. S. Han, S. Yang*, and K. Sheng, "High-voltage and high-ION/IOFF vertical GaN-on-GaN Schottky barrier diode with nitridation-based termination," IEEE Electron Device Lett., vol. 39, no. 4, pp. 572–575, Apr. 2018. (Featured in Compound Semiconductor and Semiconductor Today)
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上一条： 30. S. Han, S. Yang*, R. Li, X. Wu, and K. Sheng, "Current-collapse-free and fast reverse recovery performance in vertical GaN-on-GaN Schottky barrier diode," IEEE Trans. Power Electron., vol. 36, no. 6, pp. 5012-5018, Jun. 2019. (Featured in Compound Semiconductor and Semiconductor Today)
下一条： 32. S. Yang*, S. Han, R. Li, and K. Sheng, "1 kV/1.3 mΩ·cm2 vertical GaN-on-GaN Schottky barrier diodes with high switching performance," 30th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, May 13-17, 2018. (IEEE ISPSD Charitat Young Researcher Award)