7. S. Han, S. Yang*, and K. Sheng, “Fluorine-implanted termination for vertical GaN Schottky rectifier with high blocking voltage and low forward voltage drop,” IEEE Electron Device Lett., vol. 40, no. 7, pp. 1040–1043, Jul. 2019
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上一条： 6. Y. Liu, S. Yang*, S. Han, and K. Sheng, “Investigation of surge current capability of GaN E-HEMTs in the third quadrant: the impact of p-GaN contact,” IEEE J. Emerg. Sel. Topics Power Electron., vol. 7, no. 3, pp. 1465-1474, Sep. 2019
下一条： 8. S. Yang*, S. Han, R. Li, and K. Sheng, “1 kV/1.3 mΩ·cm2 vertical GaN-on-GaN Schottky barrier diodes with high switching performance,” 30th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, May 13-17, 2018. (IEEE ISPSD Charitat Young Researcher Award)