16. C. Sun, Z. Niu, S. Yang*, "Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs," 35th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, May 28-Jun 01, 2023
点击次数：
是否译文：否
上一条： 15. Y. Li, S. Yang*, K. Liu, K. Cheng, K. Sheng, B. Shen, "Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer Structure," IEEE Trans. Electron Devices, vol. 70, no. 2, pp. 619-626, Feb. 2023
下一条： 17. J. Du, S. Yang*, G. Xu, S. Long, "Surge Current Ruggedness in Vertical GaN-on-GaN PiN Diode: Role of Conductivity Modulation," 35th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, May 28-Jun 01, 2023