18. H. Wang, Y. Yin, F. Ji, J. Du, H. Li, C. Zhao, B. Li, C. Hu, W. Cao, X. Tang*, S. Yang*, "Enhanced gate breakdown and electroluminescence in p-GaN gate HEMTs under pulsed switching conditions," 35th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, May 28-Jun 01, 2023
点击次数：
是否译文：否
上一条： 17. J. Du, S. Yang*, G. Xu, S. Long, "Surge Current Ruggedness in Vertical GaN-on-GaN PiN Diode: Role of Conductivity Modulation," 35th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, May 28-Jun 01, 2023
下一条： 19. Y. Li, S. Yang*, K. Liu, K. Cheng, K. Sheng, B. Shen, "Low ON-Resistance Fully-Vertical GaN-on-SiC Schottky Barrier Diode with Conductive Buffer Layer," 34th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Vancouver, Canada, May 22-25, 2022