24. Q. Bao, S. Yang*, K. Sheng, "UIS Withstanding Capability of GaN E-HEMTs with Schottky and Ohmic p-GaN contact," 32th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep 13-18, 2020
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上一条： 23. S. Han, S. Yang*, K. Sheng, "Negative Dynamic RON in Vertical GaN PiN Diode: The Impact of Conductivity Modulation," 32th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep 13-18, 2020
下一条： 25. S. Li, S. Yang*, S. Han, K. Sheng, "Investigation of Temperature-Dependent Dynamic RON of GaN HEMT with Hybrid-Drain under Hard and Soft Switching," 32th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep 13-18, 2020