32. S. Yang*, C. Zhou, S. Han, J. Wei, K. Sheng, and K. J. Chen, "Impact of substrate bias polarity on buffer-related current collapse in AlGaN/GaN-on-Si power devices," IEEE Trans. Electron Devices, vol. 64, no. 12, pp. 5048–5056, Dec. 2017
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上一条： 31. S. Yang*, S. Han, R. Li, and K. Sheng, "1 kV/1.3 mΩ·cm2 vertical GaN-on-GaN Schottky barrier diodes with high switching performance," 30th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, May 13-17, 2018. (IEEE ISPSD Charitat Young Researcher Award)
下一条： 33. S. Yang*, Y. Lu, H. Wang, S. Liu, C. Liu, and K. J. Chen, "Dynamic gate stress-induced VTH shift and its impact on dynamic RON in GaN MIS-HEMTs," IEEE Electron Device Lett., vol. 37, no. 2, pp. 157–160, Feb. 2016