33. S. Yang*, Y. Lu, H. Wang, S. Liu, C. Liu, and K. J. Chen, "Dynamic gate stress-induced VTH shift and its impact on dynamic RON in GaN MIS-HEMTs," IEEE Electron Device Lett., vol. 37, no. 2, pp. 157–160, Feb. 2016
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上一条： 32. S. Yang*, C. Zhou, S. Han, J. Wei, K. Sheng, and K. J. Chen, "Impact of substrate bias polarity on buffer-related current collapse in AlGaN/GaN-on-Si power devices," IEEE Trans. Electron Devices, vol. 64, no. 12, pp. 5048–5056, Dec. 2017
下一条： 34. S. Yang*, S. Liu, Y. Lu, C. Liu, and K. J. Chen, "AC-capacitance techniques for interface trap analysis in GaN-based buried-channel MIS-HEMTs," IEEE Trans. Electron Devices, vol. 62, no. 6, pp. 1870–1878, June 2015