中国科学技术大学杨树--中文主页-- 36. S. Yang*, Z. Tang, K. Wong, Y. Lin, C. Liu, Y. Lu, S. Huang, and K. J. Chen, "High-quality interface in Al2O3/GaN/AlGaN/GaN MIS-structures with in situ pregate plasma nitridation," IEEE Electron Device Lett., vol. 34, no. 12, pp. 1497–1499, Dec. 2013. (ESI Highly Cited Paper; Featured in Compound Semiconductor and Semiconductor Today)

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36. S. Yang*, Z. Tang, K. Wong, Y. Lin, C. Liu, Y. Lu, S. Huang, and K. J. Chen, "High-quality interface in Al2O3/GaN/AlGaN/GaN MIS-structures with in situ pregate plasma nitridation," IEEE Electron Device Lett., vol. 34, no. 12, pp. 1497–1499, Dec. 2013. (ESI Highly Cited Paper; Featured in Compound Semiconductor and Semiconductor Today)

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上一条： 35. S. Yang*, et al., "Thermally induced threshold voltage instability of III-nitride MIS-HEMTs and MOSC-HEMTs: underlying mechanisms and optimization schemes," 2014 IEEE International Electron Devices Meeting (IEDM’14), San Francisco, USA, Dec. 15-17, 2014

杨树 (教授)