中国科学技术大学杨树--中文主页-- 13. S. Yang*, et al., “Thermally induced threshold voltage instability of III-nitride MIS-HEMTs and MOSC-HEMTs: underlying mechanisms and optimization schemes,” 2014 IEEE International Electron Devices Meeting (IEDM’14), San Francisco, USA, Dec. 15-17, 2014

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13. S. Yang*, et al., “Thermally induced threshold voltage instability of III-nitride MIS-HEMTs and MOSC-HEMTs: underlying mechanisms and optimization schemes,” 2014 IEEE International Electron Devices Meeting (IEDM’14), San Francisco, USA, Dec. 15-17, 2014

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上一条： 12. S. Yang*, Y. Lu, H. Wang, S. Liu, C. Liu, and K. J. Chen, “Dynamic gate stress-induced VTH shift and its impact on dynamic RON in GaN MIS-HEMTs,” IEEE Electron Device Lett., vol. 37, no. 2, pp. 157–160, Feb. 2016

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