13. S. Li, S. Yang*, Z. Han, Z. Hao, K. Sheng, G. Xu, "Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension," IEEE J. Electron Devices Soc., vol. 12, pp. 548-554, Jul. 2024
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上一条： 12. S. Li, K. Sheng, and S. Yang*, "Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain," IEEE Trans. Electron Devices, vol. 70, no. 7, pp. 3754-3761, July 2023
下一条： 14. Y. Li, S. Yang*, F. Ji, X. Tang, K. Sheng, "Investigation of conductivity modulation in vertical GaN-on-GaN PiN diode under high current density," Appl. Phys. Lett., vol. 122, no. 9, Feb. 2023, Art. no. 092102