3. S. Li, K. Sheng, and S. Yang*, "Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain," IEEE Trans. Electron Devices, vol. 70, no. 7, pp. 3754-3761, July 2023
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上一条： 2. S.Han, S.Yang*, and K. Sheng,“Conductivity modulation in vertical GaN PiN diode: Evidence and impact,” IEEE Electron Device Lett., Vol. 42, no. 3, pp.300-303, Mar. 2021. (Featured in CompoundSemiconductor)
下一条： 4. S. Han, S. Yang*, R. Li, X. Wu, and K. Sheng, “Current-collapse-free and fast reverse recovery performance in vertical GaN-on-GaN Schottky barrier diode,” IEEE Trans. Power Electron., vol. 36, no. 6, pp. 5012-5018, Jun. 2019. (Featured in Compound Semiconductor and Semiconductor Today)