4. S. Li, K. Sheng, and S. Yang*, "Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain," IEEE Trans. Electron Devices, vol. 70, no. 7, pp. 3754-3761, July 2023
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上一条： 3. Z. Han, H. Zhang, S. Long, S. Yang*, "Low On-Resistance Vertical GaN-on-GaN Trench MIS-FET with Small Temperature Dependence," 37th IEEE Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), 2025
下一条： 5. S. Han, S. Yang*, and K. Sheng,"Conductivity modulation in vertical GaN PiN diode: Evidence and impact," IEEE Electron Device Lett., Vol. 42, no. 3, pp.300-303, Mar. 2021. (Featured in CompoundSemiconductor)