7. S. Li, K. Sheng, and S. Yang*, "Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain," IEEE Trans. Electron Devices, vol. 70, no. 7, pp. 3754-3761, July 2023
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上一条： 6. J. Du, S. Yang*, X. Xie, Z. Han, G. Xu and S. Long, "Time-/Current-Dependent Surge Current Capability of Fully-Vertical GaN-on-GaN PiN Diode With Conductivity Modulation," IEEE J. Emerg. Sel. Topics Power Electron., vol. 12, no. 6, pp. 5884-5891, Dec. 2024
下一条： 8. S. Han, S. Yang*, R. Li, X. Wu, and K. Sheng, “Current-collapse-free and fast reverse recovery performance in vertical GaN-on-GaN Schottky barrier diode,” IEEE Trans. Power Electron., vol. 36, no. 6, pp. 5012-5018, Jun. 2019. (Featured in Compound Semiconductor and Semiconductor Today)