12. S. Li, K. Sheng, and S. Yang*, "Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain," IEEE Trans. Electron Devices, vol. 70, no. 7, pp. 3754-3761, July 2023
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上一条: 11. J. Chang, Y. Yin, J. Du, H. Wang. H. Li, C. Zhao, H. Li, C. Hu, W. Cao, X. Tang*, S. Yang*, "On-Chip Integrated High-Sensitivity Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure," IEEE Electron Device Lett., vol. 44, no. 4, pp. 594-597, Apr. 2023
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