11. J. Chang, Y. Yin, J. Du, H. Wang. H. Li, C. Zhao, H. Li, C. Hu, W. Cao, X. Tang*, S. Yang*, "On-Chip Integrated High-Sensitivity Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure," IEEE Electron Device Lett., vol. 44, no. 4, pp. 594-597, Apr. 2023
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上一条： 10. Y. Yin, X. Liu, X. Tang*, X. Xie, H. Wang, C. Zhao, S. Yang*, "Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs," Appl. Phys. Lett., vol. 125, no. 17, Art. no. 173506, Oct. 2024
下一条： 12. S. Li, K. Sheng, and S. Yang*, "Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain," IEEE Trans. Electron Devices, vol. 70, no. 7, pp. 3754-3761, July 2023