2. X. Xie, S. Yu, X. Tang, R. Chen, G. Xu, S. Long, S. Yang*, "kV-Class Vertical GaN PiN Diode Under Proton Irradiation: Impact on Conductivity Modulation," IEEE Electron Device Lett., vol. 46, no. 3, pp. 353-356, March 2025.
点击次数：
论文类型：期刊论文
是否译文：否
上一条： 1. Z. Han, S. Yang*, M. Wang, C. Chu and S. Long, "Achieving 205 cm2V-1s-1 Inversion Channel Mobility in 1.4 kV Vertical GaN-on-GaN MISFET with Nitride Gate Dielectric," 2024 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2024, pp. 1-4
下一条： 3. J. Du, C. Sun, Q. Tang, B. Jang, Z. Dong, X. Wu, S. Yang*, "An Efficient Switching Transient Analytical Model for P-GaN Gate HEMTs With Dynamic CG(VDS, VGS)," IEEE Trans. Power Electron., vol. 40, no. 1, pp. 2139-2148, Jan. 2025.